PART |
Description |
Maker |
SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储 RESISTOR 62 OHM .5W CARB COMP 4 Mbit (512K x8) SuperFlash EEPROM 4兆位(为512k × 8)超快闪EEPROM 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
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Cypress Semiconductor Corp.
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟TM架构 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟,TM架构
|
Cypress Semiconductor Corp.
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CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 18-Mbit QDR-II SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture 20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp. M.S. Kennedy Corporation
|
CY7C1386D-200AXI CY7C1387F-167BGC CY7C1387F-167BGI |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY JT 23C 2#16 21#20 SKT RECP JT 32C 32#20 PIN RECP 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列 4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel Corporation Intel Corp. Intel, Corp.
|
CY7C1380DV25-250BZXI CY7C1380DV25-200BZC CY7C1380D |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
CY62148DV30L CY62148DV30L-55ZSXI CY62148DV30LL CY6 |
4-Mbit (512K x 8) MoBL垄莽 Static RAM 4-Mbit (512K x 8) MoBL? Static RAM
|
Cypress Semiconductor
|
IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
CY62148EV30LL-45BVXI CY62148EV30LL-55SXI CY62148EV |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32 4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|